majority carrier การใช้

• The collector current has two components : minority carriers and majority carriers.
• And my majority carriers aren't pushed away.
• It is often said that the Schottky diode is a " majority carrier " semiconductor device.
• The n and p type designations indicate which charge carrier acts as the material's majority carrier.
• In typical operation, the base emitter holes the " majority carrier " in the base.
• When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants.
• The ( A ) layers are usually n-doped which means that electrons are the majority carriers of this device.
• In DLTS plots the minority carrier spectra usually are depicted with an opposite sign of amplitude in respect to the majority carrier trap spectra.
• The opposite carrier is called the minority carrier, which exists due to thermal excitation at a much lower concentration compared to the majority carrier.
• MOSFETs, on the other hand, have much faster switching capability because of their unipolar conduction ( only majority carriers carry the current ).
• Essentially, the semiconductor's majority carrier concentration will remain ( relatively ) unchanged, while the minority carrier concentration sees a large increase.
• Only majority carriers ( electrons in n-type material or holes in p-type ) can flow through a semiconductor for a macroscopic length.
• Instead, a measure of the profile of the doping gradients provides an " effective " profile that better matches the profile of the majority carrier density.
• Once the minority carrier enters the drift region, it is'swept'across the junction and, at the other side of the junction, becomes a majority carrier.
• If an intrinsic semiconductor is doped with a donor impurity then the majority carriers are electrons; if the semiconductor is doped with an acceptor impurity then the majority carriers are holes.
• If an intrinsic semiconductor is doped with a donor impurity then the majority carriers are electrons; if the semiconductor is doped with an acceptor impurity then the majority carriers are holes.
• In " figure 1 ( a ) " it is observed that the free majority carriers are scattered throughout the structure because of the absence of an external electric field.
• Minority carriers play an important role in inversion layer ), so conventionally the source and drain designation for the carriers is adopted, and FETs are called " majority carrier " devices.
• In the threshold voltage page the definition is the voltage required to push all the majority carriers away from the gate creating a depletion layer ( at higher voltages the inversion layer forms ).
• Although the electrons penetrate only a short distance into the p-type material, the electric current continues uninterrupted, because holes ( the majority carriers ) begin to flow in the opposite direction.